发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that can reduce the cost and substrate packaging area, and furthermore to equalize the characteristics of a pair of transistors or the like. SOLUTION: A semiconductor device is provided with a one conductivity type semiconductor substrate 3, an identical conductivity type separation band 10 that divides the semiconductor substrate 3 into pair or region parts for surrounding and has concentration of impurities that are higher than those at the side of the surface of the semiconductor substrate 3, a pair of vertical semiconductor elements 1 and 2 that share the semiconductor substrate 3 as a collector region and consist of the opposite conductivity type base regions 12 and 22 which are provided at each of a pair of regions and one conductivity type emitter regions 13 and 23 provided in the opposite conductivity type base regions 12 and 22, an insulation film that covers the surface of the semiconductor substrate 3, and at least one pair of resistance elements 14 and 24 that are formed at a pair of region parts on the insulation film.
申请公布号 JP2000124323(A) 申请公布日期 2000.04.28
申请号 JP19980290425 申请日期 1998.10.13
申请人 MATSUSHITA ELECTRONICS INDUSTRY CORP 发明人 UTSUNOMIYA SATORU;TOMITA NOBUO
分类号 H01L29/73;H01L21/331;H01L21/761;H01L21/8222;H01L21/8234;H01L27/06;H01L27/07;H01L29/732;(IPC1-7):H01L21/822;H01L21/823 主分类号 H01L29/73
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