发明名称 An elevated pin diode active pixel sensor including a unique interconnection structure
摘要 <p>An active pixel sensor includes a substrate [40], an interconnect structure [43] adjacent to the substrate [40], and at least one photo sensor adjacent to the interconnect structure [43]. Each photo sensor includes an individual pixel electrode [44]. An I-layer [46] is formed over all of the pixel electrodes [44]. A transparent electrode [50] is formed over the I-layer [48]. An inner surface of the transparent electrode [50] is electrically connected to the I-layer [46] and the interconnect structure [43].</p>
申请公布号 EP0996164(A2) 申请公布日期 2000.04.26
申请号 EP19990307737 申请日期 1999.09.30
申请人 HEWLETT-PACKARD COMPANY 发明人 THEIL, JEREMY A.;CAO, MIN;VOOK, DIETRICH W.;PERNER, FREDERICK A.;SUN, XIN;MA, SHAWMING;RAY, GARY W.
分类号 H01L27/146;H04N5/335;H01L31/02;(IPC1-7):H01L27/146 主分类号 H01L27/146
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