| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a capacitor, where the capacitor is ensured of high capacity, similar to conventional cases, even if a dielectric film is made large in thickness, to improve the capacitor in breakdown voltage. SOLUTION: A lower electrode 103 of polysilicon provided with stripe-like openings 108 that penetrate through a conductive film is formed on a LOCOS oxide film 102, and an insulating film 104 is formed as a dielectric film on the surface of the lower electrode 103. Furthermore, an upper electrode 105 of the polysilicon is formed for the formation of a capacitor. Stripe-like openings are provided to the lower electrode 103, for instance by providing a lower electrode film of 400 nm thickness, if the space between the adjacent openings is set at 600 nm, and the opening at 600 nm width, a capacitor with the lower electrode provided with openings as described can be increased in capacitance by 17% or so, as compared with one with a flat and lower electrode. Stripe-like grooves, where a conductive film is left on the base, may also be used in place of the stripe-like openings.
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