| 摘要 |
PROBLEM TO BE SOLVED: To reduce the scale of a circuit, when an intermediate potential generating circuit capable of obtaining a stable output potential is constituted on the same semiconductor substrate by using MOS transistors of one conductivity type. SOLUTION: An intermediate potential generating circuit is constituted of an intermediate potential generating part 1, which consists of N-channel MOS transistors 3, 4, and an output part 2 which consists of N-channel MOS transistors 6, 7. An output voltage outputted from an output terminal 8 is applied to the gate of the transistor 4, so that the change of an output voltage which is caused by noise superposed on the output terminal 8 can be restrained. Since this intermediate potential generating circuit is constituted of only the same conductivity-type N-channel MOS transistors, there is no need for an element isolation region to be formed, when the transistors are formed on the same semiconductor substrate, and the circuit scale can be reduced.
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