| 摘要 |
PROBLEM TO BE SOLVED: To enable forming an MOS type transistor having gate insulating films of different kinds, e.g. two kinds of a silicon oxide film and a tantalum oxide film without increasing a thermal treatment process and a mask process. SOLUTION: After an element isolating region 101 is formed on a semiconductor substrate 100 composed of silicon, a tantalum oxide film 102 is deposited on a first region. Thermal treatment is performed to the semiconductor substrate 100 in an atmosphere containing oxygen as main component. The tantalum oxide film 102 is left in the first region, and a silicon oxide film 103 is formed in a second region. After a conducting film is deposited on the tantalum oxide film 102 and the silicon oxide film 103, the conducting film is patterned, and a first gate electrode 104 and a second gate electrode 105 are formed. A first gate insulating film 106 is formed by patterning the tantalum oxide film 102, and a second gate insulating film 107 is formed by patterning the silicon oxide film 103.
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