发明名称 METHOD AND APPARATUS FOR IN-SITU-MEASURING FOR SEMICONDUCTOR MANUFACTURING PROCESS
摘要 PROBLEM TO BE SOLVED: To enhance a manufacturing yield in a semiconductor manufacture by a method wherein process parameters are measured by a sensor and are stored in a storage device, and also the process parameters are traced by a timing device as a temporal function. SOLUTION: A semiconductor wafer 10 is fitted on a chamber in order to inspect a manufacture process, and various process parameters are measured by a sensor 14 provided in a region such as an end part 16 of the wafer 10, a center part of the wafer 10, or the like with respect to uniformity of the entire wafer 10 during the process, and the measured process parameters are stored in a storage device. Furthermore, data of the process parameters are read out via a data interface 32, and the process parameters are traced by a plurality of timing devices having a power source as a temporal function. Thereby, it is possible to enhance a manufacturing yield in a semiconductor manufacture.
申请公布号 JP2000174084(A) 申请公布日期 2000.06.23
申请号 JP19990325226 申请日期 1999.11.16
申请人 SIEMENS AG;INTERNATL BUSINESS MACH CORP <IBM> 发明人 FLIETNER BERTRAND;K PAUL MULLER
分类号 G05B19/00;G05D23/00;H01L21/66;H01L23/544;(IPC1-7):H01L21/66 主分类号 G05B19/00
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