| 摘要 |
PROBLEM TO BE SOLVED: To provide a material for a standard process and of a higher relative dielectric constant. SOLUTION: This method forms a semiconductor device on a semiconductor substrate 202. The layer 206 of a suboxide material is formed on the substrate 202, and the suboxide material contains a material selected from among a group formed of HfSiOx, ZrSiOx, LaSiOx, YSiOx, ScSiOx and CeSiOx and includes a process for forming a structure 210 on the layer of the suboxide material. In a different example, the semiconductor device is a transistor and structure formed on the layer of the suboxide material is a gate electrode (containing polycrystalline silicon, tungsten, titanium, tungsten nitride, titanium nitride, platinum, aluminum or arbitrary combinations of them).
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