| 摘要 |
PROBLEM TO BE SOLVED: To provide the formation of a dual-damascene wire which neither leaves foreign matter in the wire due to insufficient etching of an interlayer insulating film in an etching process nor cause wiring defects. SOLUTION: An interlayer insulating film 22 is formed on a lower-layer conductor layer 21 and a resist film 22, which has an opening in via hole pattern 31 is formed on the inter-layer insulating film 22. Then a via hole 32 is formed by etching the interlayer insulating film 22 through the use of a resist film 23 as a mask and filled with a material which has etching speed faster than that of the interlayer insulting film to form an embedded film 24. Then a resist film 25, which has an opening of a wiring groove pattern 33, is formed on the embedded film 22 and used as a mask to etch the embedded film 24 and interlayer insulating film 22, thereby forming a wiring groove 34 in the interlayer insulating film 22.
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