METAL CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metal contact of the semiconductor device is provided by preventing a junction breaking of the low portion of the contact hole through forming an epitaxial silicon layer as much as a required thickness, and so as to have a stable resistance value when forming the metalization. CONSTITUTION: A method of forming the metal contact of the semiconductor device contains the following steps: a step to furnish a substrate having a lower structure which the contact holes are formed; a step to ionize the silicon particles by treating plasma, after forming the silicon particles with sputtering a silicon target through loading the substrate to the sputter system; a step to form the epitaxial silicon layer at the low portion of the contact hole with moving the silicon ions to the interior of the contact hole by applying bias to the sputter system; a step to form orderly a titanium layer and a titanium nitride layer at the top portion of the structure; and a step to form a titanium silicide layer at the low portion of the contact hole through reacting the silicon of the epitaxial silicon layer with the titanium of the titanium layer by a thermal treatment.