METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to perform easily a succeeding process by improving a process for forming a capacitor lower electrode. CONSTITUTION: A method for manufacturing a semiconductor device comprises the following steps. A semiconductor substrate(20) is formed with a transistor and a bit line(24) on a cell region(A) and a peripheral circuit region(B). A nitride layer and an insulating layer are deposited on the bit line. A portion for forming a capacitor is defined on the cell region. A polysilicon for a capacitor lower electrode is deposited on a whole structure. The polysilicon for the capacitor lower electrode is removed. A gap fill oxide layer is deposited thereon. The gap fill oxide layer is remained only on a gap portion of a lower electrode polysilicon by etching the gap fill oxide layer. The capacitor lower electrode is completed by etching an exposed portion of the capacitor lower electrode. The gap fill oxide layer and the oxide layer for forming the capacitor are removed simultaneously and the nitride layer is removed. A dielectric layer(31) and a capacitor upper electrode(32) are formed on the cell region in order to complete the capacitor.