| 摘要 |
PROBLEM TO BE SOLVED: To prevent SiO gas from being retained on the side face of a crystal and the crystal from being dislocated by varying the flow rate of an inert gas flowing between a radiation shield and the single crystal with the diameter of the single crystal in a growth stage. SOLUTION: The weight of a silicon single crystal I is detected by a weight detector 14 as the single crystal I is grown, the weight signal is sent to a controller 15 to control a gas feeder 17. As a result, the supply of argon gas to a furnace body 2 is appropriately adjusted, SiO is rapidly discharged from the furnace body 2 by the argon gas in the amt. corresponding to the generation of SiO, and the dislocation of the crystal is prevented. Meanwhile, the weight detector 14 is electrically connected to the controller 15, an electric signal from the detector 14 is received by the controller 15, and the diameter is calculated from the relation between the weight and diameter of the silicon single crystal I previously stored in the controller.
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