| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor of high output and high frequency which operates properly even at high temperatures. SOLUTION: An n-type SiC layer 2 is formed on a substrate 1, an oxide film is formed on the n-type SiC layer 2, a part of the oxide film is removed so that the surface of the n-type SiC layer 2 is exposed on which an AlGaN layer 6 is formed, and on the AlGaN layer 6, a gate electrode 5 is formed. Two parts of an oxide film near the AlGaN layer 6 are removed to form two exposed parts on the surface of the n-type SiC layer 2, with a source electrode 3 formed at one exposed part, while a drain electrode 4 is formed at the other exposed part.
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