| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device in less processes with high accuracy wherein a pMOS transistor and nMOS transistor are provided on the same substrate with a first conductive type transistor's gate electrode which is a first conductive type, while a second conductive type transistor's gate electrode which is a second conductive type. SOLUTION: After a first silicon film 16 is deposited with boron which is a doped p-type impurity, a non-doped second silicon film 17 is deposited, forming a two-layer gate electrode. Then, arsenic ions are implanted with a POS side masked with a resist, while boron ions are implanted with an NMOS side masked with a resist, and thermally processed for diffusing impurities in a gate/drain region and gate electrode.
|
