发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND PRODUCTION THEREOF
摘要 PROBLEM TO BE SOLVED: To suppress the resistance increase of a connection at a via part and to suppress the local increase of a current density without improving production accuracy, even if wiring width or via hole diameter is reduced in accordance with the reduction of design rules. SOLUTION: Wiring A of a top layer in the wiring connected by a plug B is made into a structure through which a via hole penetrates. Even if the alignment of the upper layer wiring A to the via hole is deviated, since the area in contact with the wiring A on the side face of the plug B is hard to be reduced, the increase of resistance at the via part is suppressed and the local increase of the current density can be suppressed.
申请公布号 JP2000208617(A) 申请公布日期 2000.07.28
申请号 JP19990010772 申请日期 1999.01.19
申请人 KAWASAKI STEEL CORP 发明人 TSUKUMO TOSHIKI
分类号 H01L23/522;H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L23/522
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