发明名称 METHOD AND CHAMBER FOR SURFACE TREATMENT
摘要 PROBLEM TO BE SOLVED: To reduce the variance in the surface treatment between a plurality of members to be simultaneously treated. SOLUTION: A surface treatment chamber 80 has a narrow inlet side gas flow passage 100 between an inner wall 98a of a treatment chamber body 82 and a side surface 96c of a treatment base part 92, and has a narrow gas flow passage between an inner wall 98b and a side surface 96d. An inlet side gas storage part 104 and an outlet side gas storage part 106 are provided on a lower part of the treatment base part 92. The processing gas flows into the inlet side gas storage part 104 from a gas inlet 108, and flows into an upper processing space 112 of the processing base part 92 through the inlet side gas flow passage 100. The outlet side gas flow passage 102 allows the processing gas in the processing space 112 to flow in the outlet side gas storage part 106. The processing gas in the outlet side gas storage part 106 is discharged outside through a gas outlet 110.
申请公布号 JP2000212775(A) 申请公布日期 2000.08.02
申请号 JP19990014687 申请日期 1999.01.22
申请人 SEIKO EPSON CORP 发明人 TAKAHASHI KATSUHIRO;MORI YOSHIAKI
分类号 H01L21/302;C23F1/12;C23F4/00;H01L21/306;(IPC1-7):C23F1/12 主分类号 H01L21/302
代理机构 代理人
主权项
地址