| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a carbon nitride film capable of obtaining a hard carbon nitride film high in adhesion with a substrate. SOLUTION: At the time of simultaneously executing the formation of a carbon film by plasma CVD and nitrogen ion beam irradiation, gaseous hydrogen is mixed into a plasma gaseous starting material, and a negative bias is applied on a substrate 2, by which SP2-coupled soft graphite components in the carbon film to be formed on the substrate 2 are subjected to etching. Moreover, by applying a nitrogen ion beam 8, the film is made dense to obtain the hard carbon nitride film. Namely, by the high adhesion by the ion beam irradiation and a high film forming speed by plasma 5, the hard carbon nitride film high in adhesion with the substrate 2 can be obtd.
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