发明名称 EXCIMER LASER DEVICE FOR SEMICONDUCTOR EXPOSURE
摘要 PROBLEM TO BE SOLVED: To provide an excimer laser device for semiconductor exposure which uses a diffraction grating to make an oscillation wavelength band narrow, which can provide a narrow oscillation wavelength band by devising the shape of an output mirror. SOLUTION: The excimer laser device for semiconductor exposure includes an optical resonator having an output mirror 17 and a reflection type diffraction grating 16 in a Littrow mounting, a laser chamber 11 positioned in the optical resonator and sealed with an excimer gas, and a slit 14 and a beam expander 15 disposed between the diffraction grating 16 and laser chamber 11. In this case, the output mirror 17 comprises a concave cylindrical mirror.
申请公布号 JP2000332322(A) 申请公布日期 2000.11.30
申请号 JP19990138383 申请日期 1999.05.19
申请人 USHIO SOGO GIJUTSU KENKYUSHO:KK;NEC CORP 发明人 SAITO TAKASHI;KOMAE SHIGEO
分类号 H01L21/027;G03F7/20;H01S3/08;(IPC1-7):H01S3/08 主分类号 H01L21/027
代理机构 代理人
主权项
地址