发明名称 |
EXCIMER LASER DEVICE FOR SEMICONDUCTOR EXPOSURE |
摘要 |
PROBLEM TO BE SOLVED: To provide an excimer laser device for semiconductor exposure which uses a diffraction grating to make an oscillation wavelength band narrow, which can provide a narrow oscillation wavelength band by devising the shape of an output mirror. SOLUTION: The excimer laser device for semiconductor exposure includes an optical resonator having an output mirror 17 and a reflection type diffraction grating 16 in a Littrow mounting, a laser chamber 11 positioned in the optical resonator and sealed with an excimer gas, and a slit 14 and a beam expander 15 disposed between the diffraction grating 16 and laser chamber 11. In this case, the output mirror 17 comprises a concave cylindrical mirror.
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申请公布号 |
JP2000332322(A) |
申请公布日期 |
2000.11.30 |
申请号 |
JP19990138383 |
申请日期 |
1999.05.19 |
申请人 |
USHIO SOGO GIJUTSU KENKYUSHO:KK;NEC CORP |
发明人 |
SAITO TAKASHI;KOMAE SHIGEO |
分类号 |
H01L21/027;G03F7/20;H01S3/08;(IPC1-7):H01S3/08 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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