Integrated memory with global amplifiers, e.g. for SGRAM

摘要

The memory includes memory cells arranged at the crossing points of bit lines and word lines. Local amplifiers (SA) are connected to at least one respective bit line. At least two global amplifiers are connected to several of the local amplifiers. In a first operating mode, only one of the two global amplifiers is active during each write access, and transfers a datum via one of the local amplifiers to a corresponding bit line. In a second operating mode, both global amplifiers are active simultaneously during a write access, and a common datum is transferred via at least one local amplifier respectively to the corresponding bit lines.