发明名称 |
Verfahren zur Herstellung einer Elektrode |
摘要 |
The invention relates to a method for producing an electrode (10) in which the electrode material (9), which frequently can only be etched with difficulty, no longer needs to be directly structured. The desired structure is firstly produced in the insulation layer (5) which can be easily etched and thus be easily structured, and is then filled in with the electrode material (9). This makes it possible to avoid a direct etching of the electrode material which exhibits all the cited problems.
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申请公布号 |
DE19929723(A1) |
申请公布日期 |
2001.01.04 |
申请号 |
DE19991029723 |
申请日期 |
1999.06.29 |
申请人 |
SIEMENS AG |
发明人 |
BRAUN, GEORG;HOENIGSCHMID, HEINZ;BEITEL, GERHARD;WENDT, HERMANN;SAENGER, ANNETTE |
分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01L21/824;H01L21/28 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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