Elektrisches Halbleiterbauelement

摘要

An electric semiconductor element comprising a monocrystalline semiconductor substrate which is made, for example, out of silicon; an insulating layer (6) which is penetrated by a contact hole (30) on at least one point and arranged on the surface of the semiconductor substrate (1); in addition to a contact element which comes into contact with the semiconductor substrate (1) by means of the contact hole (30) and which is made of a material such as aluminium, whereby the semiconductor material of the substrate can be dissolved in an anisotropic process. The edges of the contact hole (30) are configured as diffusion-preventing structures.