Wafer defect measurement involves measuring depths of defects from wafer surface on basis of measured intensities of scattered laser radiation at two or more wafer temperatures

摘要

The method involves measuring defects in a layer beneath the surface of a wafer (1) with wafer surfaces by measuring the intensities of scattered radiation (4) at two or more temp. of the wafer and measuring the depths of the defects from the wafer surface on the basis of the measured intensities. The scattered radiation is produced by a laser (6). An Independent claim is also included for a wafer defect measurement arrangement.