| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor integrated circuit device with a level shift output circuit, wherein voltages applied to respective elements will not exceed the dielectric strength of the elements so that the elements in the level shift circuit are prevented from being deteriorated and broken as a semiconductor integrated circuit with a level shift circuit which outputs a high voltage. SOLUTION: This level shift circuit device has an inverter 1 connected to an input terminal IN, a level shift circuit 2 which is connected to the inverter 1, a switch circuit 3 which is turned ON and OFF under the control of an inverter 6 in the level shift circuit 2, an output circuit 4 which is applied with a voltage V3 via the switch circuit 3 and outputs a level-shifted signal via an output terminal OUT, and the output terminal OUT. This level shift circuit devices biases the output circuit 4 with a voltage V1 and the voltage V3, when outputting the voltage V3 and turns OFF the switch circuit 3 not to apply the voltage V3 to the output circuit 4, when outputting a ground-level voltage.
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