| 摘要 |
PROBLEM TO BE SOLVED: To provide a film-forming composition capable of imparting a low density film excellent in dielectric constant characteristics and CMP resistance and useful as an interlayer insulating film in semiconductor elements, etc. SOLUTION: This film-forming composition comprises (A) silane compounds composed of at least one kind selected from the group consisting of R2R3Si(OR1)2, R2Si(OR1)3 and Si(OR1)4, and R2s(R1O)3-sSiRSi(OR1)3-tR2t (wherein R1 to R3 are each a monovalent organic group; R is a divalent organic group; s and t are each an integer of 0 to 1) or its hydrolyzate and/or condensation product, (B) at least one organic polymer selected from the group of a polyester, a polyester, a polycarbonate, a polyanhydride and a (meth)acrylic polymer and (C) at least one kind selected from the group consisting of an alcohol-based solvent, a ketone-based solvent, an amide-based solvent and an ester-based solvent.
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