METHOD FOR FORMING SEMICONDUCTOR DEVICES ON SEMICONDUCTOR WAFERS

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a plurality of semiconductor devices on a plurality of semiconductor wafers.SOLUTION: The method includes forming a conductive layer on a surface of a first semiconductor wafer to create a Schottky contact between the conductive layer formed on the first semiconductor wafer and the first semiconductor wafer. A material composition of the conductive layer formed on the first semiconductor wafer is selected on the basis of the value of the physical property of the first semiconductor wafer. The method further includes forming a conductive layer on a surface of a second semiconductor wafer to create a Schottky contact between the conductive layer formed on the second semiconductor wafer and the second semiconductor wafer. A material composition of the conductive layer formed on the second semiconductor wafer is selected on the basis of the value of the physical property of the second semiconductor wafer. The material composition of the conductive layer formed on the second semiconductor wafer is different from the material composition of the conductive layer formed on the first semiconductor wafer.SELECTED DRAWING: Figure 1