| 摘要 |
PURPOSE: A photoresist copolymer and a photoresist composition are provided to have the excellent etching tolerance, the thermal resistance and the adhesive property and to use in a lithography process using a light source of 157mm. CONSTITUTION: A photoresist copolymer is produced by melting a compound of a chemical formula, a tetrafluoro ethylene and a maleic anhydride in an organic solution, adding a radical polymerizing initiator and radical-polymerizing. A photoresist composition is produced by melting the copolymer of 10-30wt% for the organic solution, mixing a photoacid generator of 0.1-10wt% for a resist polymer and filtering with a hyperfine filter. The organic solution is a single solution or a mixed solution of cyclohexane, tetrahydrofuran, toluene and xylene. The polymerizing initiator is selected from benzole peroxide, 2,2'-azovisiso butyronitrile, di-t-butyl peroxide. The photoacid generator uses a compound of sulfide group or an oniumnate group among diphenyl iodinate hexafluoro phosfate, diphenyl iodinate hexafluoro antimonite and so on. In the formula, a R1 and a R2 are hydrogen and methyl or ethyl. An I is a fixed number among 0-2. An m and an n are 1 or 2. An a and ab are fixed numbers among 0-3.
|
