Characterizing monocrystalline silicon-germanium zones on monocrystalline silicon substrate, combines x-ray diffraction spectrum measurement and modeling

摘要

The x-ray diffraction spectrum of the structure is measured. The diffraction spectra of a monocrystalline silicon substrate, and a monocrystalline silicon substrate completely covered with a layer of monocrystalline SiGe, are simulated. Simulated spectra are added, assigning weights (a) and (1-a), to obtain a summed spectrum. The summed spectrum is compared with the measured spectrum. Simulation parameters and weighting (a) are adjusted, to reduce the difference between summed, and measured spectra.