| 摘要 |
PROBLEM TO BE SOLVED: To reduce the short-channel effect of a MOS transistor by a method wherein a first parts of selective epitaxial semiconductor layers are formed between the undercut sidewalls of components formed on a semiconductor device substrate and the semiconductor device substrate, and a second parts of the semiconductor layers are formed adjacent to the sidewalls, are exposed and are formed in parallel to the main surface of the substrate. SOLUTION: Eepitaxial semiconductor layers 62 are formed selectively on regions on the surface of a substrate 20 to be exposed. Each layer 62 comprises a first part and a second part. The first part has a first surface 64 which is covered with a spacer 34, and the second part has a second surface 68 which is covered with the spacer 34. The second surfaces 68 are formed in parallel substantially to the main surface 69 of the substrate 20. Because of this, doped source/drain regions 74 can be formed in the substrate 20 without creating ununiformed and deeper junction sectional regions. Accordingly, the junction parts between the layers 62 which are formed at the stage of an ion implantation are substantially constant and have the whole depth parallel to the main surface of the semiconductor device substrate 20.
|
