| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device having such a structure that can suppress the increase, etc., of the manufacturing man-hour regarding the formation of electrodes while the performance of the device as a capacitor is secured. SOLUTION: In the DRAM and logic circuit forming region of a semiconductor device on which a DRAM and logic circuit are mixedly mounted, contact holes 8 for diffusion layers 6 and metallic wiring M1 are formed at prescribed positions by depositing interlayer insulating films 7 on the diffusion layers 6. Then metallic barrier films 9 are formed on the insulating films 7 and in the contact holes 8 and a filling material 10 is buried in the holes 8. In addition, the storage electrodes 9a of a capacitor are formed by exposing the metallic barrier films 9 by removing the filling material 10 only from the contact holes 8 formed in the memory cell area of the DRAM. Thereafter, high dielectric films 11 are deposited on the storage electrodes 9a and the counter electrodes 12 of the capacitor are formed simultaneously with the metallic wiring M1.
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