| 摘要 |
<p>The invention relates to an integrated semiconductor circuit and to a method for the production thereof. According to the invention, trenches are provided on a first surface region of a substrate (1) and a coil (2) is formed on a second surface region, whereby the trenches are narrow compared to the size of the second surface region, and the trenches are filled with an insulating material. The invention is characterized in that a trench structure consisting of additional narrow trenches (3) is etched into the substrate in the second surface region before forming the coil, and said trench structure is filled at the same time as the narrow trenches in the first surface region with the insulating material by means of isotropic deposition. The trenches in the first surface region and the trench structure are preferably etched at the same time. This results, without any additional effort, in the provision of a structure which is filled with an insulating dielectric, is located under the coil, and which reduces the coupling between the coil and the substrate.</p> |
