| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable groove wiring technology, wherein erosion or dishing in a polishing process is suppressed, related to such groove wiring technology as Ta or W material is used for a barrier layer, using copper (Cu) for wiring material. SOLUTION: A process where an interlayer insulating film 15 is formed, a process where a recessed part 17 of the inter-layer insulating film 15 in which a wiring material layer 22 (conductor) is embedded is formed of, for example, a wiring channel 18 and connection hole 19, and a process where a barrier layer 21 is formed on the internal surface of the recessed part 17 as well as on the surface of the interlayer insulating film 15 and then the wiring material layer 22 is formed on the barrier layer 21 so as to fill the recessed part 17, are provided. Here, before the barrier layer 21 is formed, a plurality of channels 16 are formed on the surface of the interlayer insulating film 15.
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