| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element where ohmic contact is surely obtained, power consumption can be suppressed low, degradation can be sufficiently prevented and productivity is superior. SOLUTION: The element 10 has a substrate 1 having a group II-VI compound semiconductor containing at least one kind of group II element selected from a group consisting of beryllium, magnesium, zinc, cadmium and mercury, and at least one kind of group VI element selected from a group consisting of oxygen, sulfur, selenium and tellurium and a contact layer 6 which is formed on the substrate 1 and conspiring an addition of at least one kind of group V element selected from a group consisting of phosphor, arsenic and antimony as p-type impuritie to the group II-VI compound semiconductor.
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