| 摘要 |
PROBLEM TO BE SOLVED: To protect the surface of a wafer holding mechanism which comes into contact with a wafer against cleaning gas by inert gas, by a method wherein the wafer contacting surface of the wafer holding mechanism where no excess deposit is attached is covered, and cleaning gas is fed to flow. SOLUTION: A semiconductor wafer 1 is heated with a heater 402 through the intermediary of a susceptor (wafer holding mechanism) 51, and the susceptor 51 is supported with an annular heat insulating material 404 as being thermally insulated. Furthermore, cleaning gas is made to flow as inert gas is fed to flow from a gas nozzle 6 or the one side of the holding mechanism 51. When cleaning gas is made to flow, the wafer contacting surface of the susceptor 51 where no excess deposit is attached is covered with a semiconductor wafer 1, by which cleaning gas is restrained from coming into contact with the contacting surface, the wafer contacting surface of the susceptor 51 where an excess deposit is attached can be restrained from being etched when a cleaning operation is carried out.
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