| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a compound semiconductor single crystal by an LEC method, which is based on a heat treatment method in which the heat treatment time is shortened while reducing the degree of the occurrence of crystal defects such as cracks or slips in the crystal. SOLUTION: In a method for producing a compound semiconductor single crystal, which comprises heat treating a compound semiconductor single crystal produced by an LEC method by again heating it to raise the temperature so as to remove the internal strain and subjecting the compound semiconductor single crystal to the processing process, the heat treatment is conducted by raising the temperature at a rate of <=200 deg.C/h, then keeping at 750 to 900 deg.C for at least 30 min and cooling down to the room temperature at a rate of <=100 deg.C/h.
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