发明名称 |
Production of a structure in a substrate comprises forming a hard mask on the substrate, forming a structure of trenches in the substrate |
摘要 |
Production of a structure in a substrate (10) comprises forming a hard mask (20) on the substrate; forming a structure of trenches (T1, T2) in the substrate having a high aspect ratio using the mask; self-adjusting a second hard mask (30) on the first hard mask and the trench structure using non-conforming deposition of a Ti or Ti compound so that the deposited material of the second mask is deposited only on the upper side of the first mask; converting the Ti or Ti compound by tempering into TiO2; and forming a modified structure by selectively etching using the second mask so that the modified structure has even higher aspect ratio. Preferred Features: The first and/or second masks are deposited by a CVD process.
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申请公布号 |
DE19958905(C1) |
申请公布日期 |
2001.04.12 |
申请号 |
DE19991058905 |
申请日期 |
1999.12.07 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GUTSCHE, MARTIN |
分类号 |
H01L21/033;H01L21/311;H01L21/768;(IPC1-7):H01L21/308;H01L21/314;H01L21/283 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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