发明名称 Production of a structure in a substrate comprises forming a hard mask on the substrate, forming a structure of trenches in the substrate
摘要 Production of a structure in a substrate (10) comprises forming a hard mask (20) on the substrate; forming a structure of trenches (T1, T2) in the substrate having a high aspect ratio using the mask; self-adjusting a second hard mask (30) on the first hard mask and the trench structure using non-conforming deposition of a Ti or Ti compound so that the deposited material of the second mask is deposited only on the upper side of the first mask; converting the Ti or Ti compound by tempering into TiO2; and forming a modified structure by selectively etching using the second mask so that the modified structure has even higher aspect ratio. Preferred Features: The first and/or second masks are deposited by a CVD process.
申请公布号 DE19958905(C1) 申请公布日期 2001.04.12
申请号 DE19991058905 申请日期 1999.12.07
申请人 INFINEON TECHNOLOGIES AG 发明人 GUTSCHE, MARTIN
分类号 H01L21/033;H01L21/311;H01L21/768;(IPC1-7):H01L21/308;H01L21/314;H01L21/283 主分类号 H01L21/033
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