| 摘要 |
PROBLEM TO BE SOLVED: To form an insulating film of low specific inductive capacity where degassing is hard to take place, with having to conduct special thermal processes. SOLUTION: A hexamethyldisiloxane as a material introduced into a reactive chamber, where a pressure is kept at 930 Pa at a flow rate of 2,000 ml/min through a liquid mass flow, and a dilute nitrogen gas is introduced at a flow rate of 5,000 ml/min, with a nitric monoxide gas of an oxidant introduced in a standard state at a flow rate of 400 ml/min, causing a plasma polymerization with the material. Thus, an inter layer insulating film comprising an organic/ inorganic hybrid film is formed on a silicon substrate kept at 400 deg.C in the reactive chamber.
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