发明名称 FILM-FORMING SYSTEM
摘要 PROBLEM TO BE SOLVED: To process a substrate in an atmosphere of low oxygen until an insulating film is formed on the substrate, so as not to make a coating film on the surface of a substrate react unwillingly on oxygen. SOLUTION: In an insulating film forming system, a gas feed means and an exhaust means are provided to a heating processing device which evaporates a solvent component contained in a liquid applied on a wafer W, and a processing chamber is filled up with low atmosphere of oxygen. A panel 55 is provided to shut off an atmosphere in one region, where a thermal treatment oven 20 and an interface section are arranged, from an atmosphere in the other region. Nitrogen gas is supplied to this region, so as to make its atmosphere low in oxygen component.
申请公布号 JP2001102374(A) 申请公布日期 2001.04.13
申请号 JP19990274787 申请日期 1999.09.28
申请人 TOKYO ELECTRON LTD 发明人 MIZUTANI YOJI
分类号 H01L21/31;H01L21/316;(IPC1-7):H01L21/31 主分类号 H01L21/31
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