METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To improve embedding characteristics of a metal plating film into a fine wiring groove or through-hole. SOLUTION: For embedding of a metal film into a wiring groove or through- hole by utilizing a metal precipitation through electroplating, a plating solution is used which is doped with a substance having, such a chemical structure that a part of a molecular structure has a tertiary amine and a linear conjugation system with positive charges or an aromatic cycle conjugation system with positive charges, which consists of four or more atomic chains and that at least one bond of nitrogen in the tertiary amine has directly bonded with the conjugation system.