| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem in conventional crystallization method such that the appropriate energy density range of laser light is limited and a slight variation in the fabrication process causes variations in the of a semiconductor thin film. SOLUTION: The method for fabricating a thin film transistor comprises a step for forming an interconnection including a gate electrode 5 on a substrate 1, a step for forming a semiconductor thin film 2 above the interconnection through an insulation film 4, and a first crystallization step for crystallizing a partial SOM of the semiconductor thin film 2 overlapping the interconnection by irradiating the semiconductor thin film 2 with an energy beam at a relatively high energy density. The method for fabricating a thin film transistor further comprises a second crystallization step for crystallizing a partial SOM of the semiconductor thin film 2 not overlapping the interconnection by irradiating the semiconductor thin film 2 with an energy beam at a relatively low energy density while sustaining crystallized state of the partial SOM of the semiconductor thin film 2 overlapping the interconnection, and a step for implanting impurities selectively into the crystallized semiconductor thin film 2 except a channel region overlapping the gate electrode 5 to form a source region and a drain region.
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