| 摘要 |
PROBLEM TO BE SOLVED: To reduce the difference in the etching rate between-various silicon oxide films to obtain excellent oxide removing efficiency, and to provide etching fluid useful on forming a cobalt silicide. SOLUTION: In this method for manufacturing a semiconductor device, a thermal oxide film is removed by using an etching fluid whose pH is ranging from 6 to 8 and which is obtained by mixing HF fluid, NH4F, and (NH4)2SO4 so that HF concentrator can be set so as to be not less than 0.1 wt.%, for example, 0.2 wt.%, and that NH4F concentration can be set so as to be ranging from 20 to 40 wt.%, for example, 37 wt.%, and that (NH4)2SO4 concentration can be set so as to be ranging from 5 to 15 wt.%, for example, 8 wt.%.
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