发明名称 |
METHOD OF MANUFACTURING CRYSTALLINE SEMICONDUCTOR FILM, CRYSTALLIZING APPARATUS AND METHOD OF MANUFACTURING TFT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a crystalline semiconductor film and a crystallizing apparatus used in the manufacturing method, whereby the crystalline semiconductor film composed of crystals having large grain sizes can be formed comparatively easily and a TFT superior in TR characteristics can be manufactured. SOLUTION: A laser beam of a first energy E1 which is sufficient to form crystals having large grain sizes is irradiated on a glass substrate 15 having an amorphous Si film, thereby forming large crystals and growing fine crystals, and a laser beam of a second energy E2 is irradiated on it, which is lower than E1 but is sufficient to melt and recrystallize the fine crystals.
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申请公布号 |
JP2001126987(A) |
申请公布日期 |
2001.05.11 |
申请号 |
JP19990308474 |
申请日期 |
1999.10.29 |
申请人 |
FUJITSU LTD |
发明人 |
TAKIZAWA YUTAKA;HORI TETSUO |
分类号 |
G09F9/30;H01L21/20;H01L21/205;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 |
主分类号 |
G09F9/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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