发明名称 METHOD OF MANUFACTURING CRYSTALLINE SEMICONDUCTOR FILM, CRYSTALLIZING APPARATUS AND METHOD OF MANUFACTURING TFT
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a crystalline semiconductor film and a crystallizing apparatus used in the manufacturing method, whereby the crystalline semiconductor film composed of crystals having large grain sizes can be formed comparatively easily and a TFT superior in TR characteristics can be manufactured. SOLUTION: A laser beam of a first energy E1 which is sufficient to form crystals having large grain sizes is irradiated on a glass substrate 15 having an amorphous Si film, thereby forming large crystals and growing fine crystals, and a laser beam of a second energy E2 is irradiated on it, which is lower than E1 but is sufficient to melt and recrystallize the fine crystals.
申请公布号 JP2001126987(A) 申请公布日期 2001.05.11
申请号 JP19990308474 申请日期 1999.10.29
申请人 FUJITSU LTD 发明人 TAKIZAWA YUTAKA;HORI TETSUO
分类号 G09F9/30;H01L21/20;H01L21/205;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 主分类号 G09F9/30
代理机构 代理人
主权项
地址