| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit in which boosting voltage VPP can be generated responding to voltage used for a memory cell array region. SOLUTION: A VPP generating circuit 100 included in a semiconductor integrated circuit comprises a VPP dividing circuit 10 dividing boosting voltage VPP, a VDDA dividing circuit 11 dividing array voltage supplied to a memory cell array region, a VREFD generating circuit 12 generating reference voltage VREFD based on an output of the VDDA dividing circuit 11, and a comparator section 13 comparing reference voltage VREFD with voltage VPPn outputted by the VPP dividing circuit 10. Thereby, boosting voltage VPP can be varied in accordance with array voltage VDDA.
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