| 摘要 |
PROBLEM TO BE SOLVED: To provide a word line reset circuit and method for reducing the charge leak of a memory cell connected with a non-selected word line at the time of resetting a selected word line. SOLUTION: A word line reset circuit connected with one of word lines 14 for applying a first potential Vcc when the connected word line 14 is selected, and for applying a second potential Vbb to the word line when the connected word line 14 is non-selected is composed of a first driver circuit 20 for applying the first potential Vcc to the connected word line 14 in a first selection period in which the connected word line 14 is selected, a second driver circuit 22 for applying an intermediate potential GND between the first potential and the second potential to the connected word line in a second selection period starting after the first selection period, and a third driver circuit 26 disabled in the first and second selection periods and applying the second potential Vbb to the connected word line in the other period.
|
