Asymmetric bottom contacted device

摘要

The invention provides a Bottom Contacted 2D-layer Device (BCD) for the determination of graphene doping and chemical sensing. The device can be made by transfer of high quality CVD grown graphene films onto n- or p-doped silicon substrates yielding Schottky barrier diodes. Exposure to liquids and gases change the charge carrier density in the graphene and as a result the electrical transport of the device is modulated. The changes can be easily detected and interpreted in the doping power of the adsorbent. This principle allows one to create a new type of chemical sensor platform exploiting the monolayer nature of graphene or other carbon material. The device benefits from facile fabrication and the result is a robust device which can investigate surface chemistry on monolayer materials.

主权项

1. A sensor device comprising:
an electrode; a 2D material layer in direct contact with the electrode forming a diode, whereby exposure of the 2D material layer to an analyte changes a charge carrier density of the 2D material layer and modulates a charge transport through the diode that is capable of being sensed in a vertical direction with respect to the 2D material layer.