发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit which gives a board a potential which is different from that of the source of a transistor and can be improved in area efficiency. SOLUTION: In a circuit where logic cells are arranged regularly, substrate potentials NSUB and PSUB different from a power supply voltage VDD and a grounding voltage VSS which are supplied to the sources of transistors in the cells are supplied to a substrate, substrate potential supply cells VSC are arranged in a region where the logic cells CA are arranged. The substrate potential supply cells VSC are connected to the substrate potentials NSUB and PSUB through N-type substrate potential NSUB wires 11a and P-type substrate potential NSUB wires 12a, potentials NSUB and PSUB are supplied to the substrate potential supply cells VSC, and potentials NSUB and PSUB are supplied to the substrate. When substrate potential wires are arranged in a logic cell region, a large element area is occupied by the substrate potential wires, but when the substrate potential supply cells VSC are sued, a semiconductor integrated circuit can be improved in area efficiency.
申请公布号 JP2001148464(A) 申请公布日期 2001.05.29
申请号 JP19990328525 申请日期 1999.11.18
申请人 TOSHIBA MICROELECTRONICS CORP;TOSHIBA CORP 发明人 KITABAYASHI SHINJI;AZUMA TATSUYA;USUBA RYOKO
分类号 H01L21/822;G11C16/30;H01L21/82;H01L27/02;H01L27/04;H01L27/118;(IPC1-7):H01L27/04 主分类号 H01L21/822
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