METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR ELEMENT USING REACTIVE ION ETCHING

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a contact hole of a semiconductor element using a reactive ion etching. SOLUTION: According to the method for forming the contact hole of the semiconductor element using the reactive ion etching, a semiconductor substrate having at least more than one material film to be etched is mounted in the chamber for the reactive ion etching. Then a mixture of gas including carbon and fluoro-compound is supplied as an etching gas into the chamber for the reactive ion etching, and CH2F2 gas is introduced as a factor for increasing etching selective ratio between the material film and a lower film. A plasma is formed by supplying electromagnetic energy to the supplied gas for plasma etching, and the contact hole is formed to expose the surface of the lower film through the material film.