Plasma treatment equipment for substrate particularly semiconductor wafer has hermetic vacuum chamber with treatment space having wafer support element like resin film with coefficient of thermal expansion higher than wafer

摘要

The equipment comprises a treatment volume (2) inside a hermetically closed vacuum chamber (1) where a substrate, in particular a semiconductor wafer (4), is provided upon a lower surface. A support element, in particular a resin film, having the coefficient of thermal expansion higher than that of the substrate is provided for the wafer. A device (5) holds the substrate by pressing to a lower electrode (3) by contact from above. A cooling arrangement for the lower electrode is also provided. The semiconductor substrate (4) carries a circuit pattern on the front face, which is provided with the support element for placing on the electrode (3), and the substrate is subjected to plasma treatment at the level of rear face. The holding device (5) presses the substrate onto the electrode (3) by a force which allows the substrate and the support element to undergo thermal expansion and contraction. The method for plasma treatment of substrate comprises steps including the provision of support element and placement on lower electrode, the pressing of substrate onto the electrode at the level of circumference, and the generation of plasma in the chamber (1) by an application of high-frequency voltage from a generator (12) to the lower electrode which undergoes cooling. The resin film is fastened to the lower surface of substrate by adhesive bonding.