发明名称 MAGNETORESISTANCE EFFECT SENSOR, THIN FILM MAGNETIC HEAD, AND THIN FILM WAFER EQUIPPED WITH THAT THIN FILM MAGNETIC HEAD
摘要 PROBLEM TO BE SOLVED: To provide an MR sensor which can eliminate the unstable property of the output, and to provide a thin film magnetic head and a thin film wafer having a plurality of the thin film magnetic heads. SOLUTION: The sensor comprises an MR laminated structural body containing a nonmagnetic layer, first and second ferromagnetic layers (free layer and pinned layer) laminated to interpose the nonmagnetic layer and an antiferromagnetic layer laminated between them on the opposite side of the second ferromagnetic layer to the nonmagnetic layer, and a longitudinal bias means formed on both ends of the MR laminated structural body in the direction parallel to the magneto sensitive face or ABS(airborne surface) so as to apply a longitudinal bias magnetic field to the MR laminated structural body. The MR laminated structural body is formed in such a manner that the magnetization direction of the pinned layer is tilted the axis of easy magnetization of the pinned layer.
申请公布号 JP2001176025(A) 申请公布日期 2001.06.29
申请号 JP19990316642 申请日期 1999.11.08
申请人 TDK CORP 发明人 SAKAI MASANORI;TAKANO KENICHI;IWAI YUZURU
分类号 G11B5/39;(IPC1-7):G11B5/39 主分类号 G11B5/39
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