发明名称 |
Planar integrated circuit |
摘要 |
<p>A method is provided for a planar surface of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A gate electrode is formed over a substrate having source/drain regions adjacent to the gate electrode and in the substrate. A silicon dioxide layer is formed over the gate electrode and a portion of the substrate not covered by the gate electrode. A first phosphorous doped spin-on-glass layer is formed over the silicon dioxide layer, wherein the spin-on-glass is doped to a concentration sufficient to facilitate gettering of charge mobile ions. An opening is then formed in the spin-on-glass layer and the silicon dioxide layer exposing a portion of the source drain region. <IMAGE></p> |
申请公布号 |
EP1119042(A2) |
申请公布日期 |
2001.07.25 |
申请号 |
EP20010201322 |
申请日期 |
1993.08.20 |
申请人 |
STMICROELECTRONICS, INC. |
发明人 |
CHAN, TSIU CHIU;BRYANT, FRANK RANDOLPH |
分类号 |
H01L21/3105;H01L21/312;H01L21/316;H01L21/322;(IPC1-7):H01L21/768;H01L21/310 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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