| 摘要 |
PROBLEM TO BE SOLVED: To calibrate the temperature controller of a heat-treating device or the like with high accuracy based on film thickness by accurately measuring the film thickness of thin film that is formed on a semiconductor wafer by heat treatment. SOLUTION: Since a natural oxide film or the like is formed when a wafer is exposed to the atmosphere, the relational data between the while the wafer has been exposed to the atmosphere and the increase in film thickness is acquired in advance, After the wafer is heat-treated, time for exposing to the atmosphere is measured before the film thickness is measured, the amount of increase of the film thickness is obtained based on the time and the relational data, and the amount of increase in the film thickness is subtracted from the measured value of the film thickness to obtain the film thickness of the thin film that is formed during the heat treatment. Or, the wafer nay be loaded into the container with the inert gas atmosphere for carrying or standby after the heat treatment without performing this sort of correction, thus updating the temperature setting valued of the temperature controller of the heat-treating device based on the deviation between the film thickness of the thin film thus obtained and the target film thickness corresponding to the treatment temperature of a target.
|
