| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor storage having a three-dimensional structure of capacitors wherein the capacitors are separated electrically from each other without any process of processing finely their Pt lower electrodes by dry etching, etc. SOLUTION: In the manufacturing method of the semiconductor storage, there is prepared a semiconductor substrate having on its surface plugs 1 connected respectively with source or drain electrodes and having a plug-portion interlayer film 2 made of SiO2. After depositing a non-selective film 4 on a capacitor-portion interlayer insulation film 3 by using the film 4 as a mask, the interlayer insulation film 3 is so processed as to have a three-dimensional structure of its cylindrical opening portions. Thereafter, when depositing a Pt film on the films 3, 4 as lower electrodes 5 by using a chemical vapor-phase epitaxy method under the condition of generating a foundation selectivity, the Pt film is not deposited on the non-selective film 4, but is formed only in the desired regions. Subsequently, when the non-selective film 4 is conductive, it is so changed into an insulator by oxidizing it selectively as to complete capacitors on the semiconductor substrate, by depositing on it and on the lower electrodes 5 successively a dielectric layer 6 and an upper electrode 7.
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